Invention Grant
US09361980B1 RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages
有权
使用多个复位电压的RRAM阵列和使用多个复位电压复位RRAM阵列的方法
- Patent Title: RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltages
- Patent Title (中): 使用多个复位电压的RRAM阵列和使用多个复位电压复位RRAM阵列的方法
-
Application No.: US14620352Application Date: 2015-02-12
-
Publication No.: US09361980B1Publication Date: 2016-06-07
- Inventor: Chun-Yang Tsai , Hon-Jarn Lin , Kuo-Ching Huang , Yu-Wei Ting
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
According to another embodiment, a method of reset operation for a resistive random access memory (RRAM) array, having a first RRAM connected to a first word line and a second RRAM connected to a second word line, is provided. A first electrical resistance between the first word line and a word line voltage source is lower than a second electrical resistance between the second word line and the word line voltage source. The method includes: providing a first voltage by using the word line voltage source for resetting the first RRAM; and providing a second voltage by using the word line voltage source for resetting the second RRAM, wherein the first voltage for resetting the first RRAM is lower than the second voltage for resetting the second RRAM.
Information query
