Invention Grant
- Patent Title: High endurance non-volatile storage
- Patent Title (中): 高耐久性非易失性存储
-
Application No.: US13622045Application Date: 2012-09-18
-
Publication No.: US09361986B2Publication Date: 2016-06-07
- Inventor: Jian Chen , Sergei Gorobets , Steven Sprouse , Tien-Chien Kuo , Yan Li , Seungpil Lee , Alex Mak , Deepanshu Dutta , Masaaki Higashitani
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C5/06 ; G11C11/56
Abstract:
A non-volatile storage system is disclosed that includes non-volatile memory cells designed for high endurance and lower retention than other non-volatile memory cells.
Public/Granted literature
- US20130070530A1 HIGH ENDURANCE NON-VOLATILE STORAGE Public/Granted day:2013-03-21
Information query
