Invention Grant
- Patent Title: Low voltage semiconductor memory device and method of operation
- Patent Title (中): 低电压半导体存储器件及其操作方法
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Application No.: US14586494Application Date: 2014-12-30
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Publication No.: US09361992B1Publication Date: 2016-06-07
- Inventor: Yoke Weng Tam , Zhiqi Huang , Bai Yen Nguyen , Benjamin Shui Chor Lau
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/26 ; G11C16/30 ; G11C16/04 ; G11C7/06 ; G11C16/28 ; G11C11/56

Abstract:
A semiconductor device for storing data includes a memory cell. The memory cell comprises a plurality of transistors. A trimmable sense amplifier is electrically connected to the memory cell. The trimmable sense amplifier is configured to provide variable current to said memory cell. A charge pump is also electrically connected to the memory cell. The charge pump includes a plurality of diodes disposed in series with one another. The charge pump includes an input for receiving an input voltage and an output for providing an output voltage greater than the input voltage to the memory cell.
Public/Granted literature
- US20160189784A1 LOW VOLTAGE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATION Public/Granted day:2016-06-30
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