A memory structure is provided including an array of non-volatile memory (NVM) cells arranged in rows and columns, each cell including a NVM transistor having a body bias terminal coupled to body bias supply. The memory structure further includes a control system to control the body bias supply to adjust a body bias voltage coupled to the body bias terminals during read operations of the memory structure to compensate for shifts in threshold voltages (VTH) of the NVM transistors to maintain a read current window (IRCW) between a cell in which the NVM transistor is ON and a sum of leakage current through cells in which the NVM transistor is OFF. Methods of operating the memory structure are also described.