Invention Grant
US09362004B2 Semiconductor device, semiconductor memory device and memory system
有权
半导体器件,半导体存储器件和存储器系统
- Patent Title: Semiconductor device, semiconductor memory device and memory system
- Patent Title (中): 半导体器件,半导体存储器件和存储器系统
-
Application No.: US14488012Application Date: 2014-09-16
-
Publication No.: US09362004B2Publication Date: 2016-06-07
- Inventor: Young-Bo Shim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0044812 20140415
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C29/12 ; G11C7/20 ; G11C29/00 ; G11C7/10 ; G11C17/16 ; G11C17/18 ; G11C7/22 ; G11C11/16 ; G11C13/00 ; G11C16/00 ; G11C16/12 ; G11C17/14 ; G11C29/04 ; G11C29/44

Abstract:
A semiconductor device includes a nonvolatile memory block suitable for outputting data stored in a plurality of nonvolatile memory cells included therein based on first control information, and programming data in the nonvolatile memory cells based on second control information; a control block suitable for generating the first control information based on an initialization signal, wherein the control block sequentially generates the second control information and the first control information when a program mode is activated; and a test control block suitable for deactivating the nonvolatile memory block and determining whether at least one control signal among a plurality of control signals included in the first and second control information is normally generated, in a test operation on the program mode.
Public/Granted literature
- US20150294736A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2015-10-15
Information query