Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US14310326Application Date: 2014-06-20
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Publication No.: US09362007B2Publication Date: 2016-06-07
- Inventor: Makoto Hirano
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/16 ; G11C16/26

Abstract:
A data transfer unit includes a first page buffer to latch data of a normal bit line connected to a normal memory cell, a second page buffer to latch data of a parity bit line connected to a parity memory cell, and a third page buffer to be first replaced when the first page buffer is defective or when the second page buffer 102c is defective. An error code correction bus is connected to the first and second page buffers, and a data bus is connected to the first, second and third page buffers.
Public/Granted literature
- US20140380116A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2014-12-25
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