Invention Grant
- Patent Title: Electron emission source and method for making the same
- Patent Title (中): 电子发射源及其制作方法
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Application No.: US14599996Application Date: 2015-01-19
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Publication No.: US09362079B2Publication Date: 2016-06-07
- Inventor: Peng Liu , De-Jie Li , Chun-Hai Zhang , Duan-Liang Zhou , Bing-Chu Du , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201410024494 20140120
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01J29/04 ; H01J31/12 ; H01J9/02

Abstract:
An electron emission source includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure comprising a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer. A method for making the electron emission source is also related.
Public/Granted literature
- US20150206695A1 ELECTRON EMISSION SOURCE AND METHOD FOR MAKING THE SAME Public/Granted day:2015-07-23
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