Invention Grant
- Patent Title: Engineered substrates for semiconductor epitaxy and methods of fabricating the same
- Patent Title (中): 用于半导体外延的工程衬底及其制造方法
-
Application No.: US14211371Application Date: 2014-03-14
-
Publication No.: US09362113B2Publication Date: 2016-06-07
- Inventor: Matthew Meitl , Scott Burroughs
- Applicant: Semprius, Inc.
- Applicant Address: US NC Durham
- Assignee: Semprius, Inc.
- Current Assignee: Semprius, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, PA
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/76 ; H01L21/02
Abstract:
In a method for fabricating an engineered substrate for semiconductor epitaxy, an array of seed structures is assembled on a surface of the substrate. The seed structures in the array have substantially similar directional orientations of their crystal lattices, and are spatially separated from each other. Semiconductor materials are selectively epitaxially grown on the seed structures, such that a rate of growth of the semiconductor materials on the seed structures is substantially higher than a rate of growth of the semiconductor materials on regions of the surface. The semiconductor materials assume a lattice constant and directional orientation of crystal lattice that are substantially similar or identical to those of the seed structures. Related devices and methods are also discussed.
Public/Granted literature
- US20140264763A1 ENGINEERED SUBSTRATES FOR SEMICONDUCTOR EPITAXY AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-09-18
Information query
IPC分类:
