Invention Grant
- Patent Title: Epitaxial wafer and method of manufacturing the same
- Patent Title (中): 外延晶片及其制造方法
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Application No.: US12634899Application Date: 2009-12-10
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Publication No.: US09362114B2Publication Date: 2016-06-07
- Inventor: Toshiaki Ono , Yumi Hoshino
- Applicant: Toshiaki Ono , Yumi Hoshino
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-318897 20081215
- Main IPC: C30B33/02
- IPC: C30B33/02 ; H01L21/02 ; H01L21/322 ; H01L29/78
Abstract:
A method of manufacturing an epitaxial wafer, including a silicon substrate having a surface sliced from single-crystalline silicon and a silicon epitaxial layer deposited on the surface of the silicon substrate, includes an oxygen concentration controlling heat treatment process in which a heat treatment of the epitaxial layer is performed under a non-oxidizing atmosphere after the epitaxial growth such that an oxygen concentration of the surface of the silicon epitaxial layer is set to 1.0×1017 to 12×1017 atoms/cm3 (ASTM F-121, 1979).
Public/Granted literature
- US20100151692A1 EPITAXIAL WAFER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-06-17
Information query
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