Invention Grant
- Patent Title: Methods for fabricating integrated circuits and components thereof
- Patent Title (中): 集成电路及其部件的制造方法
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Application No.: US14258154Application Date: 2014-04-22
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Publication No.: US09362128B2Publication Date: 2016-06-07
- Inventor: Ming Zhu , Yiang Aun Nga
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/285 ; H01L27/06 ; H01L49/02 ; H01L21/266 ; H01L21/8234
Abstract:
Methods for fabricating integrated circuits and components thereof are provided. In accordance with an exemplary embodiment, a method for a fabricating a semiconductor device is provided. The method includes providing a partially fabricated semiconductor device and forming silicide regions outside of the first and second gates. The partially fabricated semiconductor device includes a semiconductor substrate, a first gate formed over the semiconductor substrate, and a second gate formed over the semiconductor substrate and spaced apart from the first gate. Silicide formation between the first gate and the second gate is inhibited.
Public/Granted literature
- US20150303117A1 METHODS FOR FABRICATING INTEGRATED CIRCUTIS AND COMPONENTS THEREOF Public/Granted day:2015-10-22
Information query
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