Invention Grant
- Patent Title: OTP memory cell and fabricating method thereof
- Patent Title (中): OTP存储单元及其制造方法
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Application No.: US14949066Application Date: 2015-11-23
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Publication No.: US09362158B2Publication Date: 2016-06-07
- Inventor: Seong-do Jeon
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MAGNACHIP SEMICONDUCTOR, LTD.
- Current Assignee: MAGNACHIP SEMICONDUCTOR, LTD.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2012-0084862 20120802
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/112 ; G11C17/16 ; H01L29/423
Abstract:
A one-time programmable (OTP) memory cell is provided, which includes: a well of a first conductivity type; a gate insulating layer formed on the well and including first and second fuse regions; a gate electrode of a second conductivity type formed on the gate insulating layer, the second conductivity type being opposite in electric charge to the first conductivity type; a junction region of the second conductivity type formed in the well and arranged to surround the first and second fuse regions; and an isolation layer formed in the well between the first fuse region and the second fuse region.
Public/Granted literature
- US20160079113A1 OTP MEMORY CELL AND FABRICATING METHOD THEREOF Public/Granted day:2016-03-17
Information query
IPC分类:
