Nanowire semiconductor device

Invention Grant

US09362177B1 Nanowire semiconductor device 有权

Title translation: 纳米线半导体器件

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Patent Title: Nanowire semiconductor device
Patent Title (中): 纳米线半导体器件
Application No.: US14964989

Application Date: 2015-12-10
Publication No.: US09362177B1

Publication Date: 2016-06-07
Inventor: Wilfried E. Haensch , Effendi Leobandung , Tenko Yamashita
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent Vazken Alexanian
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L29/66 ; H01L21/311 ; H01L21/02 ; H01L29/06 ; H01L21/283 ; H01L21/324 ; H01L21/306

Abstract:

A method for forming a nanowire device comprises forming a fin on a substrate, depositing a first layer of insulator material on the substrate, etching to remove portions of the first layer of insulator material to reduce a thickness of the first layer of insulator material, epitaxially growing a first layer of semiconductor material on exposed sidewall portions of the fin, depositing a second layer of insulator material on the first layer of insulator material, etching to remove portions of the second layer of insulator material to reduce a thickness of the second layer of insulator material, and etching to remove portions of the first layer of semiconductor material to expose portions of the fin and form a first nanowire and a second nanowire.

Abstract(Chinese):

一种形成纳米线器件的方法包括在衬底上形成翅片，在衬底上沉积第一绝缘体材料层，蚀刻去除第一绝缘体材料层的部分以减小第一绝缘体材料层的厚度，外延地在所述翅片的暴露的侧壁部分上生长第一层半导体材料，在所述第一绝缘体材料层上沉积第二绝缘体层，蚀刻以除去所述第二绝缘体材料层的部分以减小所述第二层绝缘体材料的厚度绝缘体材料和蚀刻以去除所述第一半导体材料层的部分以暴露所述鳍片的部分并形成第一纳米线和第二纳米线。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺