Invention Grant
US09362190B2 Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element
有权
包含该半导体元件的半导体元件，半导体器件以及半导体元件的制造方法
- Patent Title: Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element
- Patent Title (中): 包含该半导体元件的半导体元件，半导体器件以及半导体元件的制造方法
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Application No.: US14581826Application Date: 2014-12-23
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Publication No.: US09362190B2Publication Date: 2016-06-07
- Inventor: Shuji Shioji , Masafumi Kuramoto
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2013-266437 20131225; JP2014-233970 20141118
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L23/15 ; H01L29/41 ; H01L33/46
Abstract:
To provide a semiconductor element that can have the high adhesion between a substrate made of an oxide or the like and a metal film, a semiconductor element includes a substrate made of an oxide, a semiconductor element structure provided on an upper surface of the substrate, and a metal film provided on a lower surface of the substrate, in which the metal film contains nanoparticles made of an oxide.
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