Invention Grant
US09362222B2 Interconnection between inductor and metal-insulator-metal (MIM) capacitor
有权
电感和金属 - 绝缘体 - 金属（MIM）电容器之间的互连
- Patent Title: Interconnection between inductor and metal-insulator-metal (MIM) capacitor
- Patent Title (中): 电感和金属 - 绝缘体 - 金属（MIM）电容器之间的互连
-
Application No.: US14064990Application Date: 2013-10-28
-
Publication No.: US09362222B2Publication Date: 2016-06-07
- Inventor: Chih-Hung Hsueh , Yen-Hsiang Hsu , Kuan-Chi Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L23/522 ; H01L49/02 ; H01L27/01 ; H01L23/532 ; H01L21/768
Abstract:
Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal-insulator-metal (MIM) capacitor formed on a substrate. The semiconductor device structure also includes an inductor formed on the MIM capacitor. The semiconductor device structure further includes a via formed between the MIM capacitor and the inductor, and the via is formed in a plurality of dielectric layers, and the dielectric layers comprise an etch stop layer.
Public/Granted literature
- US20150115404A1 INTERCONNECTION BETWEEN INDUCTOR AND METAL-INSULATOR-METAL (MIM) CAPACITOR Public/Granted day:2015-04-30
Information query
IPC分类:
