Embodiments of the present invention provide a fin type field effect transistor (FinFET) and methods of fabrication. A punchthrough stopper region is formed on a semiconductor substrate. An insulator layer, such as silicon oxide, is formed on the punchthrough stopper. Fins and gates are formed on the insulator layer. The insulator layer is then removed from under the fins, exposing the punchthrough stopper. An epitaxial semiconductor region is grown from the punchthrough stopper to envelop the fins, while the insulator layer remains under the gate. By growing the fin merge epitaxial region mainly from the punchthrough stopper, which is part of the semiconductor substrate, it provides a higher growth rate then when growing from the fins. The higher growth rate provides better epitaxial quality and dopant distribution.