Invention Grant
- Patent Title: Semiconductor element, semiconductor element manufacturing method, semiconductor module, semiconductor module manufacturing method, and semiconductor package
- Patent Title (中): 半导体元件，半导体元件制造方法，半导体模块，半导体模块制造方法以及半导体封装
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Application No.: US14428289Application Date: 2014-04-21
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Publication No.: US09362366B2Publication Date: 2016-06-07
- Inventor: Yasuyuki Yanase , Tsutomu Kiyosawa
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-101275 20130513
- International Application: PCT/JP2014/002239 WO 20140421
- International Announcement: WO2014/185010 WO 20141120
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L29/06 ; H01L23/00 ; H01L21/78 ; H01L21/04 ; H01L21/306 ; H01L21/52 ; H01L23/495 ; H01L29/872 ; H01L21/48 ; H01L21/304 ; H01L21/3065 ; H01L29/45 ; H01L29/66 ; H01L23/373 ; H01L21/683 ; H01L29/861
Abstract:
An ohmic electrode layer is disposed on a second main surface of a silicon carbide substrate, and a metal electrode layer is disposed on the ohmic electrode layer. A notch is formed along at least one pair of sides, facing each other, of a periphery of the second main surface of the silicon carbide substrate. The cross-section of the notch orthogonal to a side of the second main surface has a corner. In the cross-section, a thickness of the silicon carbide substrate at an edge thereof under which the notch is formed is smaller than a thickness of the silicon carbide substrate in a region under which the notch is not formed, and larger than a thickness of the silicon carbide substrate in a region under which a bottom of the corner is formed.
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