Invention Grant
- Patent Title: Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device
- Patent Title (中): 具有碳化硅膜的基板，用碳化硅膜制造基板的方法和半导体器件
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Application No.: US14926914Application Date: 2015-10-29
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Publication No.: US09362368B2Publication Date: 2016-06-07
- Inventor: Yukimune Watanabe
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-223558 20141031; JP2015-147473 20150727
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/04 ; H01L21/02 ; H01L21/00
Abstract:
A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film provided on the upper side of the Si substrate and a second SiC film provided on the upper side of the first SiC film. The mask has a first mask provided on the Si substrate and including an opening (first opening) and a second mask provided on the first SiC film and including an opening (second opening). The width W1 (μm) of the first opening and the thickness T1 (μm) of the first mask satisfy the following relationship: T1
Public/Granted literature
Information query
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