Invention Grant
- Patent Title: Testing of LDMOS device
- Patent Title (中): LDMOS器件的测试
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Application No.: US13208204Application Date: 2011-08-11
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Publication No.: US09362388B1Publication Date: 2016-06-07
- Inventor: Marco A. Zuniga , Craig Cassella
- Applicant: Marco A. Zuniga , Craig Cassella
- Applicant Address: US CA San Jose
- Assignee: Volterra Semiconductor LLC
- Current Assignee: Volterra Semiconductor LLC
- Current Assignee Address: US CA San Jose
- Agency: Lathrop & Gage LLP
- Main IPC: G01R31/02
- IPC: G01R31/02 ; H01L29/66
Abstract:
A method for testing an LDMOS transistor by measuring leakage current between the source and drain in the presence of a bias voltage. The leakage current is indicative of defects in the structure of the transistor.
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