The present invention relates generally to a near-infrared light-emitting diode (LED) and the method for manufacturing the same. When preparing the light-emitting layer of the near-infrared LED according to the present invention, the CsSnXX′2 solution is coated on the substrate having the hole transport layer. Then, by a drying process, the solvent is moved away and the CsSnXX′2 solution is solidified, crystallized to CsSnXX′2 in the perovskite structure, which is used as the light-emitting layer of the near-infrared LED and emits near infrared. X and X′ are identical or different halogen elements. In addition, according to the present invention, lead can be used to replace a part of tin. By adjusting the ratio of lead and tin or adopting different combination of halogen elements, the wavelength of the generated near infrared varies.