Invention Grant
- Patent Title: Gallium nitride based light emitting diode
- Patent Title (中): 氮化镓基发光二极管
-
Application No.: US14555979Application Date: 2014-11-28
-
Publication No.: US09362454B2Publication Date: 2016-06-07
- Inventor: Seong Jae Kim
- Applicant: LG INNOTEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2003-0048993 20030718
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/06 ; H01L33/00 ; H01L33/12
Abstract:
A light emitting diode includes a first conductive type semiconductor layer; at least one InxGa1−xN layer (0
Public/Granted literature
- US20150123074A1 GALLIUM NITRIDE BASED LIGHT EMITTING DIODE Public/Granted day:2015-05-07
Information query
IPC分类:
