Invention Grant
US09362485B2 Vertical hall effect sensor with offset reduction using depletion regions
有权
垂直霍尔效应传感器,使用耗尽区域进行偏移减少
- Patent Title: Vertical hall effect sensor with offset reduction using depletion regions
- Patent Title (中): 垂直霍尔效应传感器,使用耗尽区域进行偏移减少
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Application No.: US14200526Application Date: 2014-03-07
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Publication No.: US09362485B2Publication Date: 2016-06-07
- Inventor: Thomas Rocznik
- Applicant: Robert Bosch GmbH
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Maginot Moore & Beck LLP
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H01L43/04 ; H01L43/06

Abstract:
A vertical Hall Effect sensor assembly in one embodiment includes a first sensor with a first doped substrate, a first doped well, the first doped well having a doping opposite to the first doped substrate, a first endmost inner contact accessible at a first surface of the first sensor and located at a first end portion of the first doped well, a first intermediate inner contact accessible at the first surface and located between the first endmost inner contact and a second end portion of the first doped well, and a first electrode positioned on the first surface immediately adjacent to the first endmost inner contact and the first intermediate inner contact, the first electrode electrically isolated from the first doped well, and a first voltage source operably connected to the first electrode.
Public/Granted literature
- US20140266182A1 Vertical Hall Effect Sensor with Offset Reduction Public/Granted day:2014-09-18
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