Invention Grant
US09362485B2 Vertical hall effect sensor with offset reduction using depletion regions 有权
垂直霍尔效应传感器,使用耗尽区域进行偏移减少

Vertical hall effect sensor with offset reduction using depletion regions
Abstract:
A vertical Hall Effect sensor assembly in one embodiment includes a first sensor with a first doped substrate, a first doped well, the first doped well having a doping opposite to the first doped substrate, a first endmost inner contact accessible at a first surface of the first sensor and located at a first end portion of the first doped well, a first intermediate inner contact accessible at the first surface and located between the first endmost inner contact and a second end portion of the first doped well, and a first electrode positioned on the first surface immediately adjacent to the first endmost inner contact and the first intermediate inner contact, the first electrode electrically isolated from the first doped well, and a first voltage source operably connected to the first electrode.
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