Invention Grant
- Patent Title: Ferroelectric memory and manufacturing method of the same
- Patent Title (中): 铁电记忆及其制造方法相同
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Application No.: US14020262Application Date: 2013-09-06
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Publication No.: US09362487B2Publication Date: 2016-06-07
- Inventor: Seiji Inumiya , Yoshio Ozawa , Koji Yamakawa , Atsuko Sakata , Masayuki Tanaka , Junichi Wada
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2012-198891 20120910
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L43/10 ; H01L43/12 ; H01L29/51 ; H01L29/66 ; H01L27/115
Abstract:
According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al).
Public/Granted literature
- US20140070290A1 FERROELECTRIC MEMORY AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2014-03-13
Information query
IPC分类:
