Invention Grant
- Patent Title: Electronic device insulating layer material capable of forming an insulating layer at low temperature
- Patent Title (中): 能够在低温下形成绝缘层的电子器件绝缘层材料
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Application No.: US14364376Application Date: 2012-12-12
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Publication No.: US09362512B2Publication Date: 2016-06-07
- Inventor: Isao Yahagi
- Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-280187 20111221
- International Application: PCT/JP2012/082221 WO 20121212
- International Announcement: WO2013/094495 WO 20130627
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L51/05 ; H01B3/44

Abstract:
Insulating layer material comprising: polymer compound of a repeating unit containing a cyclic ether structure and a repeating unit of the formula: wherein R5 represents a hydrogen atom or a methyl group; Rb b represents a linking moiety which links the main chain of the polymer compound with a side chain of the polymer compound and optionally has a fluorine atom; R represents an organic group capable of being detached by an acid; R′ represents a hydrogen atom or a monovalent organic group having from 1 to 20 carbon atoms and optionally having a fluorine atom; the suffix b represents an integer of 0 or 1, and the suffix n represents an integer of from 1 to 5; when there are two or more Rs, they may be the same or different; and when there are two or more R's, they may be the same or different; and tungsten (V) alkoxide.
Public/Granted literature
- US20150236281A1 INSULATION-LAYER MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2015-08-20
Information query
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