Invention Grant
- Patent Title: Organic thin film transistor substrate and method of manufacturing the same
- Patent Title (中): 有机薄膜晶体管基板及其制造方法
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Application No.: US11782980Application Date: 2007-07-25
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Publication No.: US09362513B2Publication Date: 2016-06-07
- Inventor: Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
- Applicant: Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song , Tae Young Choi
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0071235 20060728
- Main IPC: G02B5/08
- IPC: G02B5/08 ; H01L51/05 ; H01L27/32

Abstract:
An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.
Public/Granted literature
- US20080023695A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-01-31
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