Invention Grant
US09362919B1 Devices for utilizing symFETs for low-power information processing
有权
用于利用symFET进行低功耗信息处理的器件
- Patent Title: Devices for utilizing symFETs for low-power information processing
- Patent Title (中): 用于利用symFET进行低功耗信息处理的器件
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Application No.: US14579763Application Date: 2014-12-22
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Publication No.: US09362919B1Publication Date: 2016-06-07
- Inventor: Behnam Sedighi , Michael Niemier , X. Sharon Hu , Joseph J. Nahas
- Applicant: University of Notre Dame du Lac
- Applicant Address: US IN Notre Dame
- Assignee: University of Notre Dame du Lac
- Current Assignee: University of Notre Dame du Lac
- Current Assignee Address: US IN Notre Dame
- Agency: Greenberg Traurig, LLP
- Main IPC: H03K19/195
- IPC: H03K19/195 ; H01L29/06 ; H01L29/16 ; H01L29/778 ; H01L29/08

Abstract:
A Boolean gate includes at least one symmetric tunneling field-effect transistor (SymFET) for low-power information processing. SymFETs are ideal for applications that demand low power and have moderate speed requirements, and demonstrate better dynamic energy efficiency than CMOS circuits. Negative differential resistance (NDR) behavior of SymFETs leads to hysteresis in inverters and buffers, and can be used to build simple Schmitt-triggers. Further, pseudo-SymFET loads may be utilized in circuits similar to all-n-type or dynamic logic. For example, latches and flip-flops as well as NAND, NOR, IMPLY, and MAJORITY gates may employ SymFETs. Such SymFET-based devices require fewer transistors than static CMOS-based designs.
Public/Granted literature
- US20160182055A1 DEVICES FOR UTILIZING SYMFETS FOR LOW-POWER INFORMATION PROCESSING Public/Granted day:2016-06-23
Information query
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