Invention Grant
US09363617B2 Semiconductor device having a base, a cavity, a diaphragm, and a substrate
有权
具有基座，空腔，隔膜和基板的半导体器件
- Patent Title: Semiconductor device having a base, a cavity, a diaphragm, and a substrate
- Patent Title (中): 具有基座，空腔，隔膜和基板的半导体器件
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Application No.: US13059987Application Date: 2009-02-20
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Publication No.: US09363617B2Publication Date: 2016-06-07
- Inventor: Kazuyuki Ono , Tomofumi Maekawa
- Applicant: Kazuyuki Ono , Tomofumi Maekawa
- Applicant Address: JP Kyoto-shi, Kyoto
- Assignee: OMRON Corporation
- Current Assignee: OMRON Corporation
- Current Assignee Address: JP Kyoto-shi, Kyoto
- Agency: Osha Liang LLP
- Priority: JP2008-235736 20080912
- International Application: PCT/JP2009/000728 WO 20090220
- International Announcement: WO2010/029655 WO 20100318
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H04R31/00 ; B81C3/00 ; H01L23/552 ; H04R19/00 ; H04R19/04 ; H01L23/00
Abstract:
A semiconductor device has a semiconductor element having a base, a cavity having a polygonal horizontal cross-section penetrating vertically through the base, a diaphragm arranged on the base to cover the cavity, and a substrate formed with a die bonding pad. A lower surface of the semiconductor element is adhered on the die bonding pad with a die bonding resin. The die bonding pad is formed so as not to contact a lower end of a valley section formed by an intersection of wall surfaces of an inner peripheral surface of the cavity of the semiconductor element.
Public/Granted literature
- US20110204457A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
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