In an electronic device including a semiconductor memory, the semiconductor memory may include a unit storage cell including a variable resistor having a resistance value that is changed according to current flowing through both terminals of the variable resistor and a selection element that is electrically coupled to one terminal of the variable resistor, a unit current generation section that generates the current flowing through both terminals by using predetermined voltage according to a polarity of current data as compared with existing data, and a pad that receives the predetermined voltage from an exterior and allows the current flowing through both terminals to be measured from an exterior.