Invention Grant
- Patent Title: Self-adjusting regulation current for memory array source line
- Patent Title (中): 用于存储器阵列源极线的自调节电流
-
Application No.: US14175196Application Date: 2014-02-07
-
Publication No.: US09368224B2Publication Date: 2016-06-14
- Inventor: Sung-En Wang , Jonathan Huynh , Steve Choi , Jongmin Park
- Applicant: SanDisk Technologies Inc.
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies, Inc.
- Current Assignee: SanDisk Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Sterne, Kessler, Goldstein & Fox PLLC
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/28 ; G11C16/04 ; G11C16/24

Abstract:
To maintain stability of memory array operations, a supplemental current can supply a common source line of a memory array so that the combined current from the memory array and supplemental current is at least a minimum regulation current level. When enabled for sensing operations, a driver circuit maintains the common source line's voltage level. A current subtractor circuit determines the difference between a reference current and a current proportional to the current flowing from the array, where the reference current is proportional to the minimum regulation current. The difference current is then mirrored by a self-adjusting current loop and supplied to the common source line to maintain its current level.
Public/Granted literature
- US20150228351A1 Self-Adjusting Regulation Current for Memory Array Source Line Public/Granted day:2015-08-13
Information query