In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device including a thin film electrode that has an underlayer and a main electrode layer formed on the underlayer. The underlayer is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer is formed of tungsten having a crystalline structure with a wavy-like surface morphology.