Invention Grant
- Patent Title: Metallization of the wafer edge for optimized electroplating performance on resistive substrates
- Patent Title (中): 晶圆边缘金属化，以优化电阻基板上的电镀性能
-
Application No.: US14294006Application Date: 2014-06-02
-
Publication No.: US09368340B2Publication Date: 2016-06-14
- Inventor: Artur Kolics
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; C25D5/02 ; C25D7/00 ; C23C18/16 ; H01L21/3205 ; H01L21/321
Abstract:
A method for electroplating a substrate is provided, including: providing a substrate having a conductive layer disposed on a top surface of the substrate, the top surface of the substrate having an edge exclusion region and a process region; directing a flow of an electroless deposition solution toward the edge exclusion region while the substrate is rotated, to plate metallic material over the conductive layer at the edge exclusion region; continuing the flow of the electroless deposition solution for a period of time to produce an increased thickness of the metallic material at the edge exclusion region, wherein the increased thickness of the metallic material reduces electrical resistance of the metallic material at the edge exclusion region; applying electrical contacts over the metallic material, and applying electrical current to the metallic material via the electrical contacts while an electroplating solution is applied over the process region of the substrate.
Public/Granted literature
- US20150348772A1 Metallization Of The Wafer Edge For Optimized Electroplating Performance On Resistive Substrates Public/Granted day:2015-12-03
Information query
IPC分类:
