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US09368345B2 Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device 有权
制造碳化硅半导体衬底的方法和制造碳化硅半导体器件的方法

Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device
Abstract:
A step of preparing a silicon carbide substrate, a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas, and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas are provided. In the step of forming a first silicon carbide semiconductor layer and the step of forming a second silicon carbide semiconductor layer, ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms.
Abstract(Chinese):

制备碳化硅衬底的步骤，使用第一源材料气体在碳化硅衬底上形成第一碳化硅半导体层的步骤，以及在第一碳化硅半导体层上形成第二碳化硅半导体层的步骤，使用 提供第二源材料气体。 在形成第一碳化硅半导体层的步骤和形成第二碳化硅半导体层的步骤中，使用氨气作为掺杂气体，第一原料气体的C / Si比率不小于1.6， 不大于2.2，C / Si比是碳原子数与硅原子数之比。

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