Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US14832496Application Date: 2015-08-21
-
Publication No.: US09368358B2Publication Date: 2016-06-14
- Inventor: Kazuhiro Harada , Arito Ogawa , Motomu Degai , Masahito Kitamura , Hiroshi Ashihara
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee: Hitachi Kokusai Electric, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-168233 20140821
- Main IPC: H01L21/38
- IPC: H01L21/38 ; H01L21/285 ; H01L21/28 ; H01L49/02
Abstract:
A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times.
Public/Granted literature
- US20160056044A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
Information query
IPC分类:
