Invention Grant
- Patent Title: Method of making a semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US13901837Application Date: 2013-05-24
-
Publication No.: US09368361B2Publication Date: 2016-06-14
- Inventor: Seung Chul Han , Jae Kyu Song , Do Hyung Kim
- Applicant: Amkor Technology, Inc.
- Applicant Address: US AZ Tempe
- Assignee: Amkor Technology, Inc.
- Current Assignee: Amkor Technology, Inc.
- Current Assignee Address: US AZ Tempe
- Agent Kevin B. Jackson
- Priority: KR10-2012-0062294 20120611
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/304 ; H01L21/683

Abstract:
In one embodiment, a method for forming an electronic device includes providing a substrate having a plurality of electronic devices formed therein, forming a protective layer over a major surface of the substrate containing the plurality of electronic devices, forming a mold layer over the protective layer, thinning a major surface of the substrate opposite to the major surface containing the plurality of electronic devices, and removing the adhesive layer and the mold layer. In another embodiment, a zone coating layer can be included between the protective layer and the mold layer.
Public/Granted literature
- US20130330931A1 METHOD OF MAKING A SEMICONDUCTOR DEVICE Public/Granted day:2013-12-12
Information query
IPC分类: