Invention Grant
- Patent Title: Contact test structure and method
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Application No.: US14846614Application Date: 2015-09-04
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Publication No.: US09368417B2Publication Date: 2016-06-14
- Inventor: Jie Chen , Hsien-Wei Chen , Tsung-Yuan Yu , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/482 ; H01L23/00

Abstract:
A system and method for testing electrical connections is provided. In an embodiment one or more floating pads may be manufactured in electrical connection with an underbump metallization structure. A test may then be performed to measure the electrical characteristics of the underbump metallization structure through the floating pad in order to test for defects. Alternatively, a conductive connection may be formed on the underbump metallization and the test may be performed on the conductive connection and the underbump metallization together.
Public/Granted literature
- US20150380329A1 Contact Test Structure and Method Public/Granted day:2015-12-31
Information query
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