Invention Grant
- Patent Title: Efficient integration of CMOS with poly resistor
- Patent Title (中): 高效集成CMOS与聚电阻
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Application No.: US14022183Application Date: 2013-09-09
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Publication No.: US09368488B2Publication Date: 2016-06-14
- Inventor: Guowei Zhang
- Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte. Ltd.
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L27/06 ; H01L29/78 ; H01L21/265 ; H01L21/28 ; H01L29/66
Abstract:
Device and methods for forming a device are presented. The method includes providing a substrate. The substrate includes a resistor region defined by a resistor isolation region. A resistor gate is formed on the resistor isolation region. An implant mask with an opening exposing the resistor region is formed. Resistor well dopants are implanted to form a resistor well in the substrate. The resistor well is disposed in the substrate below the resistor isolation region. Resistor dopants are implanted into the resistor gate to define the sheet resistance of the resistor gate. Terminal dopants are implanted to form first and second resistor terminals at sides of the resistor gate. A central portion of the resistor gate sandwiched by the resistor terminals serves as a resistive portion.
Public/Granted literature
- US20150069522A1 EFFICIENT INTEGRATION OF CMOS WITH POLY RESISTOR Public/Granted day:2015-03-12
Information query
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