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US09368563B2 Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer 有权
半导体器件包括在半导体管芯上形成的集成无源器件，其具有导电桥和扇出重分布层

Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer
Abstract:
A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.
Abstract(Chinese):

半导体器件具有第一半导体管芯。 在第一半导体管芯上形成第一电感器。 第二电感器形成在第一电感器上并与第一电感器对准。 在第一半导体管芯和第一和第二电感器上形成绝缘层。 导电桥形成在绝缘层之上并电连接在第二电感器和第一半导体管芯之间。 在一个实施例中，半导体器件具有第二半导体管芯，并且在第一和第二半导体管芯之间形成导电层。 在另一实施例中，在第一半导体管芯上形成电容器。 在另一个实施例中，绝缘层在第一半导体管芯的覆盖区之上具有第一厚度，并且第二厚度小于第一半导体管芯的覆盖区之外的第一厚度。

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