Invention Grant
- Patent Title: Vertical transistor with air-gap spacer
- Patent Title (中): 具有气隙间隔件的垂直晶体管
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Application No.: US14948257Application Date: 2015-11-21
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Publication No.: US09368572B1Publication Date: 2016-06-14
- Inventor: Kangguo Cheng , Tak H. Ning
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L21/764
Abstract:
A vertical transistor has a first air-gap spacer between the gate and the bottom source/drain, and a second air-gap spacer between the gate and the contact to the bottom source/drain. A dielectric layer disposed between the gate and the contact to the top source/drain decreases parasitic capacitance and inhibits electrical shorting.
Information query
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