Invention Grant
- Patent Title: High power gallium nitride electronics using miscut substrates
- Patent Title (中): 大功率氮化镓电子器件使用miscut衬底
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Application No.: US14071032Application Date: 2013-11-04
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Publication No.: US09368582B2Publication Date: 2016-06-14
- Inventor: Isik C. Kizilyalli , David P. Bour , Thomas R. Prunty , Gangfeng Ye
- Applicant: AVOGY, INC.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/66 ; H01L29/861 ; H01L21/02 ; H01L21/76 ; H01L29/04 ; H01L29/06
Abstract:
An electronic device includes a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the direction of between 0.15° and 0.65°. The electronic device also includes a first epitaxial layer coupled to the III-V substrate and a second epitaxial layer coupled to the first epitaxial layer. The electronic device further includes a first contact in electrical contact with the substrate and a second contact in electrical contact with the second epitaxial layer.
Public/Granted literature
- US20150123138A1 HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES Public/Granted day:2015-05-07
Information query
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