Invention Grant
US09368656B2 Back contacted photovoltaic cell with an improved shunt resistance 有权
反向接触的光伏电池具有改善的分流电阻

Back contacted photovoltaic cell with an improved shunt resistance
Abstract:
The invention relates to a photovoltaic cell, comprising a plate shaped substrate of a semiconductor material with a solar face and a connection face, a first volume of the substrate adjacent to the solar face is doped with a first polarity, the second volume is doped with a second polarity and the volumes are separated by a pn-junction, a number of apertures in the substrate extending between both faces and in which a plug has been positioned of which a part is conducting, contact tracks at the solar face of the substrate connected with the first volume and the conducting part of the plug, first contacts at the connection face of the substrate connected with the conducting part of the plug and second contacts located at the connection face of the substrate connected with the second volume, wherein the specific electrical conductivity of the plug decreases from its centre to the contact face with the substrate.
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