Invention Grant
US09368656B2 Back contacted photovoltaic cell with an improved shunt resistance
有权
反向接触的光伏电池具有改善的分流电阻
- Patent Title: Back contacted photovoltaic cell with an improved shunt resistance
- Patent Title (中): 反向接触的光伏电池具有改善的分流电阻
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Application No.: US13818345Application Date: 2011-08-23
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Publication No.: US09368656B2Publication Date: 2016-06-14
- Inventor: Menno Nicolaas Van Den Donker , Peter Andreas Maria Wijnen
- Applicant: Menno Nicolaas Van Den Donker , Peter Andreas Maria Wijnen
- Applicant Address: NL Petten
- Assignee: Stichting Energieonderzoek Centrum Nederland
- Current Assignee: Stichting Energieonderzoek Centrum Nederland
- Current Assignee Address: NL Petten
- Agency: The Webb Law Firm
- Priority: NL2005261 20100824
- International Application: PCT/NL2011/050573 WO 20110823
- International Announcement: WO2012/026812 WO 20120301
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/0216 ; H01L31/18 ; H01L31/05

Abstract:
The invention relates to a photovoltaic cell, comprising a plate shaped substrate of a semiconductor material with a solar face and a connection face, a first volume of the substrate adjacent to the solar face is doped with a first polarity, the second volume is doped with a second polarity and the volumes are separated by a pn-junction, a number of apertures in the substrate extending between both faces and in which a plug has been positioned of which a part is conducting, contact tracks at the solar face of the substrate connected with the first volume and the conducting part of the plug, first contacts at the connection face of the substrate connected with the conducting part of the plug and second contacts located at the connection face of the substrate connected with the second volume, wherein the specific electrical conductivity of the plug decreases from its centre to the contact face with the substrate.
Public/Granted literature
- US20130206226A1 Back Contacted Photovoltaic Cell with an Improved Shunt Resistance Public/Granted day:2013-08-15
Information query
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