Invention Grant
- Patent Title: Duty cycle correction circuit and semiconductor device
- Patent Title (中): 占空比校正电路和半导体器件
-
Application No.: US14484908Application Date: 2014-09-12
-
Publication No.: US09369118B2Publication Date: 2016-06-14
- Inventor: Masashi Nakata
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P
- Main IPC: H03K3/017
- IPC: H03K3/017 ; H03K5/07 ; H03K7/08 ; H03K5/156 ; H03K5/04

Abstract:
According to one embodiment, there is provided a duty cycle correction circuit including an input inverter, an output inverter, a charge distribution unit, and a drawing-off unit. The input inverter includes a PMOS transistor and an NMOS transistor and receives a clock signal. The output inverter outputs a clock signal according to a signal transmitted via a signal line from the input inverter. The charge distribution unit distributes, when one transistor of the PMOS transistor and the NMOS transistor is turned on, charge to capacitance elements selected from among one or more first capacitance elements placed on side of the signal line and among a plurality of second capacitance elements disposed on side of source of the one transistor. The drawing-off unit draws off the distributed charge from the selected capacitance elements while the one transistor is maintained to be on.
Public/Granted literature
- US20160013785A1 DUTY CYCLE CORRECTION CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2016-01-14
Information query
IPC分类: