Invention Grant
- Patent Title: Plasma gate
- Patent Title (中): 等离子门
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Application No.: US14442375Application Date: 2012-11-15
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Publication No.: US09370087B2Publication Date: 2016-06-14
- Inventor: James Andrew Leskosek
- Applicant: James Andrew Leskosek
- Agent Antony C. Edwards
- International Application: PCT/CA2012/001057 WO 20121115
- International Announcement: WO2014/075163 WO 20140522
- Main IPC: H05H1/16
- IPC: H05H1/16 ; H05H1/00 ; H05H1/52 ; H03K17/00 ; H03K17/52

Abstract:
A plasma gate includes at least one conductive input line having a corresponding at least one terminal end, a plurality of conductive output lines having a corresponding plurality of input ends, and a plasma gap having opposite first and second ends, where the plasma gap extends between the terminal ends of the input lines and the input ends of the output lines. A plasma-generating gas is resident in the plasma gap. At least one field generator having a field-generating distal end is mounted so as to position the distal end of the field generator adjacent the plasma gap. The output lines are arrayed along the plasma gap in a spaced apart array. The distal end of the field generator is positioned at least at the first end of the plasma gap.
Public/Granted literature
- US20150342017A1 PLASMA GATE Public/Granted day:2015-11-26
Information query
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