Invention Grant
- Patent Title: Manufacturing method of connector
- Patent Title (中): 连接器的制造方法
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Application No.: US14681298Application Date: 2015-04-08
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Publication No.: US09370099B2Publication Date: 2016-06-14
- Inventor: Chih-Peng Fan , Ching-Ho Hsieh , Chung-Chi Huang
- Applicant: UNIMICRON TECHNOLOGY CORP.
- Applicant Address: TW Taoyuan Hsien
- Assignee: UNIMICRON TECHNOLOGY CORP.
- Current Assignee: UNIMICRON TECHNOLOGY CORP.
- Current Assignee Address: TW Taoyuan Hsien
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: CN201410139132 20140408
- Main IPC: H01B13/00
- IPC: H01B13/00 ; C23F1/00 ; H05K3/00 ; H05K1/11 ; H05K1/02 ; H05K3/06 ; H05K3/28

Abstract:
The instant disclosure relates to a manufacturing method of connector which comprises the following steps. The first step is to provide a substrate layer and forming a first metal layer on the substrate layer. The next step is to pattern the first metal layer to form a wiring layer. The next step is to form a dielectric layer on the wiring layer, wherein the dielectric layer is formed with at least one via hole to partially expose the wiring layer and a conductive structure arranged on the inner wall of the at least one via hole and electrically connected to the wiring layer. The next step is to form a first protective layer on the dielectric layer and at least one cantilever structure between the first protective layer and the dielectric layer. The last step is to remove the substrate layer.
Public/Granted literature
- US20150289377A1 MANUFACTURING METHOD OF CONNECTOR Public/Granted day:2015-10-08
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