Invention Grant
- Patent Title: Electron emission source
- Patent Title (中): 电子发射源
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Application No.: US14599991Application Date: 2015-01-19
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Publication No.: US09373475B2Publication Date: 2016-06-21
- Inventor: Peng Liu , De-Jie Li , Chun-Hai Zhang , Duan-Liang Zhou , Bing-Chu Du , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN201410024418 20140120
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01J29/04 ; H01J31/12
Abstract:
An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein the semiconductor layer defines a number of holes, the first electrode comprises a carbon nanotube layer, and a portion of the carbon nanotube layer corresponding to the number of holes is suspended on the number of holes.
Public/Granted literature
- US20150206693A1 ELECTRON EMISSION SOURCE Public/Granted day:2015-07-23
Information query
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