A method for creating a pattern on a substrate (101) is presented, the method comprises: providing a substrate (101) comprising silicon; creating a sacrificial layer (102) on the substrate (101), wherein the sacrificial layer is formed on a first surface area (101a) of the substrate thereby leaving a second surface area (101b) exposed; depositing a first functional layer (103) at least on the second surface area (101b) of the substrate (101); removing the sacrificial layer (102); wherein: removing the sacrificial layer (102) is performed by etching the sacrificial layer (102) with an acidic aqueous solution that does not adversely affect the first functional layer (103) and the substrate (101).