Invention Grant
- Patent Title: Substrate structure and device employing the same
- Patent Title (中): 基板结构及其使用方法
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Application No.: US14737882Application Date: 2015-06-12
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Publication No.: US09373817B2Publication Date: 2016-06-21
- Inventor: Hsiao-Fen Wei , Kun-Lin Chuang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L51/52

Abstract:
A substrate structure and a device employing the same are disclosed. An embodiment of the disclosure provides the substrate structure including a flexible substrate and a first barrier layer. The flexible substrate has a top surface, a side surface, and a bottom surface. The first barrier layer is disposed on and contacting the top surface of the flexible substrate, wherein the first barrier layer consists of Si, N, and Z atoms, wherein the Z atom is selected from a group of H, C, and O atoms, and wherein Si of the first barrier layer is present in an amount from 35 to 42 atom %, N of the first barrier layer is present in an amount from 10 to 52 atom %, and Z of the first barrier layer is present in an amount from 6 to 48 atom %.
Public/Granted literature
- US20160013111A1 SUBSTRATE STRUCTURE AND DEVICE EMPLOYING THE SAME Public/Granted day:2016-01-14
Information query
IPC分类: