Invention Grant
- Patent Title: Method for detecting damage to a semiconductor chip
- Patent Title (中): 检测对半导体芯片的损坏的方法
-
Application No.: US14044140Application Date: 2013-10-02
-
Publication No.: US09378317B2Publication Date: 2016-06-28
- Inventor: Andreas Tschmelitsch , Gerhard Zojer , Guenter Holl , Guentr Herzele
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Banner & Witcoff, Ltd.
- Priority: DE102006037633 20060810
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G01R31/28 ; H01L21/66

Abstract:
A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
Public/Granted literature
- US20140040853A1 Semiconductor Device with Damage Detection Circuit and Method for Producing the Same Public/Granted day:2014-02-06
Information query