Invention Grant
- Patent Title: Boosting voltage level
- Patent Title (中): 提升电压电平
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Application No.: US14107017Application Date: 2013-12-16
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Publication No.: US09378806B2Publication Date: 2016-06-28
- Inventor: Bing Wang , Kuoyuan (Peter) Hsu , Annie-Li-Keow Lum
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G11C7/12
Abstract:
A circuit comprises a driver, a first capacitive device, and a second capacitive device. The driver has an input node, an output node, and a driver supply voltage node. The first capacitive device has a first terminal and a second terminal. The second capacitive device has a first terminal and a second terminal. The first terminal of the first capacitive device is configured to receive a first signal. The second terminal of the first capacitive device is coupled with the driver supply voltage node. The output of the driver is coupled with a first end of the second capacitive device.
Public/Granted literature
- US20150170737A1 BOOSTING VOLTAGE LEVEL Public/Granted day:2015-06-18
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