Invention Grant
- Patent Title: Non-volatile memory using bi-directional resistive elements
- Patent Title (中): 使用双向电阻元件的非易失性存储器
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Application No.: US14288517Application Date: 2014-05-28
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Publication No.: US09378812B2Publication Date: 2016-06-28
- Inventor: Frank K. Baker, Jr.
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C14/00
Abstract:
A memory cell includes a first bidirectional resistive memory element (BRME), and a second BRME, a first storage node, and a second storage node. A resistive memory write to the cell includes placing the first BRME and the second BRME in complementary resistive states indicative of the value being written. During a subsequent restoration operation, the value as written in the first BRME and second BRME is written to the first storage node and the second storage node while a wordline connected to the memory cell is deasserted.
Public/Granted literature
- US20140269008A1 NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS Public/Granted day:2014-09-18
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