Invention Grant
US09378822B2 Method for programming selected memory cells in nonvolatile memory device and nonvolatile memory device thereof
有权
用于对非易失性存储器件中的所选存储单元进行编程的方法及其非易失性存储器件
- Patent Title: Method for programming selected memory cells in nonvolatile memory device and nonvolatile memory device thereof
- Patent Title (中): 用于对非易失性存储器件中的所选存储单元进行编程的方法及其非易失性存储器件
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Application No.: US14280606Application Date: 2014-05-17
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Publication No.: US09378822B2Publication Date: 2016-06-28
- Inventor: Chung-Shan Kuo
- Applicant: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
- Applicant Address: TW Hsinchu
- Assignee: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
- Current Assignee: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
- Current Assignee Address: TW Hsinchu
- Agency: Li & Cai Intellectual Property (USA) Office
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C13/00 ; G11C16/08 ; G11C16/34
Abstract:
A method for programming memory cells of a selected word line has steps of: providing a first word line programming signal being at plurality of voltage levels in different programming slots of a current programming operation to the memory cells of the selected word line, wherein the first word line programming signal is a ramping voltage signal; and providing a second line programming signal being at plurality of voltage levels in different programming slots of a next programming operation to the memory cells of the selected word line, wherein the second word line programming signal is another one ramping voltage signal; wherein the highest voltage levels of the first and second word line programming signals are identical to each other, and a number of the voltage levels of the first word line programming signal is larger than that of the second word line programming signal.
Public/Granted literature
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