Invention Grant
US09378831B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same
有权
非易失性存储器件，其操作方法和包括其的存储器系统
- Patent Title: Nonvolatile memory devices, operating methods thereof and memory systems including the same
- Patent Title (中): 非易失性存储器件，其操作方法和包括其的存储器系统
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Application No.: US14820895Application Date: 2015-08-07
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Publication No.: US09378831B2Publication Date: 2016-06-28
- Inventor: Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
- Applicant: Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0011989 20100209; KR10-2010-0014275 20100217
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/14 ; G11C16/16 ; G11C16/08 ; G11C16/12 ; G11C16/26 ; G11C16/34 ; H01L27/115
Abstract:
Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
Public/Granted literature
- US20150348637A1 NONVOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME Public/Granted day:2015-12-03
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